Seattle, June 3, 2013 (International Microwave Symposium 2013)-Freescale Semiconductor Corporation (NYSE: FSL), a global leader in high-power radio frequency (RF) power transistors, has launched six new models Airfast RF power solution is designed for TD-LTE base stations in the 2.3 / 2.6 GHz band.
High throughput and the ability to support a large number of concurrent users make 2.3 / 2.6 GHz the preferred frequency band for LTE deployments worldwide. At the end of last year, the Chinese government announced the use of the 2.3 / 2.6 GHz frequency band as the designated frequency band for the deployment and application of TD-LTE technology, which obviously means an important growth opportunity.
The latest Freescale Airfast transistors provide excellent bandwidth and linear efficiency in a small size and are designed to drive rapid deployment of global TD-LTE networks. This product covers a wide power range, from 50W to 200W, and provides solutions for urban and macro cellular applications.
Ritu Favre, senior vice president and general manager of the RF business unit of Freescale, said, "Freescale accurately foresees the advent and significance of the 2.3 / 2.6GHz band era and fulfills its high-performance commitment through its Airfast products." Our new RF power solutions are already on the market, helping to accelerate the deployment of global TD-LTE networks. "
The new products launched by Freescale exemplify the company's commitment to providing system-level base station solutions, from home base stations to macrocell base station applications, applicable to a wide range of networks. In addition to the Airfast RF power solution, Freescale provides a series of RF GaAs MMIC products and a comprehensive QorIQ Qonverge platform. This platform is the basis of a highly scalable base station processor combination, which is built on a common architecture and covers Cellular base stations of various sizes. The QorIQ Qonverge platform allows OEMs to reuse software for cellular applications of all sizes.
product information
The four new Airfast RF transistor products suitable for the 2.6GHz LTE band are packaged linear Doherty devices that provide high efficiency in a compact, small size design. The four products include:
AFT26HW050S / GS-Specially designed for urban cellular base station applications in the 2496-2690 MHz band. Asymmetric Doherty technology is used to provide a peak power of 47.4 dBm. At an average power of 9W, the device can provide an efficiency of 47.1% and a gain of 14.2 dB.
AFT26P100-4WS-Specially designed for high power urban cellular base station applications in the 2496-2690 MHz band. Using symmetrical Doherty technology, it provides a peak power of 51 dBm. At an average power of 22W. The device provides 43.9% efficiency and 15.3 dB gain.
AFT26H160-4S4-Specially designed for medium power macro cell base station applications in the 2496-2690 MHz band. Asymmetric Doherty technology is used to provide a peak power of 52.6 dBm. At an average power of 32W, the device can provide an efficiency of 44.4% and a gain of 15.7 dB.
AFT26H200W03S-Designed specifically for high-power macrocell base station applications in the 2496-2690 MHz band. Using asymmetrical Doherty technology, providing 54.6 dBm peak power. At an average power of 45W, the device provides 44.4% efficiency and 14.0 dB gain.
Two new Airfast RF transistor products for the 2.3 GHz LTE band are packaged linear Doherty devices that provide high efficiency in a compact, small size design. Two products include:
AFT23H200-4S2L-Specially designed for high power macro cell base station applications in the 2300-2400MHz cellular band. Using asymmetrical Doherty technology, providing 54.6 dBm peak power. At an average power of 45W, the device provides an efficiency of 42.8% and a gain of 15.3 dB.
AFT23S170-13S can be used as the main transistor or peaking transistor of Doherty power amplifier. In the class AB power amplifier with an average power of 45W, it can provide 33.9% efficiency and 18.8 dB gain.
About Airfast RF power solutions
Airfast RF power solutions can improve efficiency, peak power and signal bandwidth while alleviating cost pressures. These products provide excellent performance and energy efficiency and are used by various Freescale RF technologies such as LDMOS, GaAs and GaN.
Pricing and supply
AFT26HW050S / GS, AFT26P100-4WS, AFT23H200-4S2L and AFT23S170-13S are now in production. AFT26H200W03S and AFT26H160-4S4 are planned to be put into production before the end of June 2013. Please contact your local Freescale sales representative for pricing information and samples. For more information about Freescale's RF power LDMOS solutions, please visit RFpower.
About Freescale Semiconductor
Freescale Semiconductor (NYSE: FSL) is a global leader in embedded processing solutions, providing industry-leading products and continuously improving the automotive, consumer electronics, industrial and networking markets. Our technology ranges from microprocessors and microcontrollers to sensors, analog integrated circuits and connections, which are the basis of our continuous innovation and also make our world more environmentally friendly, safer, healthier and more connected. Some of our major applications and end markets include automotive safety, hybrid and all-electric vehicles, next-generation wireless infrastructure, smart energy management, portable medical devices, consumer appliances, and smart mobile devices. The company is headquartered in Austin, Texas, and has multiple design, R & D, manufacturing, and sales organizations worldwide. For more information about Freescale, please visit.
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