According to foreign media reports, STMicroelectronics and IBM announced that they will sign an agreement to develop next-generation manufacturing technologies, which will be used in semiconductor R&D and manufacturing.
The company said the agreement includes development, design licensing and forecasting of 32nm and 22nm CMOS (complementary metal oxide semiconductor) fabrication technologies for 300mm wafers. The agreement also includes both core bulk CMOS technology and high value-added derived system-on-chip technology.
As part of the agreement, the two companies will each establish a technology development team in the factories of other companies. In order to develop bulk CMOS technology, ST will establish a research and development team at IBM Semiconductor R&D Center in New York.
Under the terms of the agreement, the jointly developed manufacturing technology will be manufactured on a large scale at STMicroelectronics' 300mm wafer fab in France. At the same time, the newly developed 300mm wafer semiconductor manufacturing public platform including IBM will also adopt the newly developed technology.
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The company said the agreement includes development, design licensing and forecasting of 32nm and 22nm CMOS (complementary metal oxide semiconductor) fabrication technologies for 300mm wafers. The agreement also includes both core bulk CMOS technology and high value-added derived system-on-chip technology.
As part of the agreement, the two companies will each establish a technology development team in the factories of other companies. In order to develop bulk CMOS technology, ST will establish a research and development team at IBM Semiconductor R&D Center in New York.
Under the terms of the agreement, the jointly developed manufacturing technology will be manufactured on a large scale at STMicroelectronics' 300mm wafer fab in France. At the same time, the newly developed 300mm wafer semiconductor manufacturing public platform including IBM will also adopt the newly developed technology.
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